A CONTROLLABLE RESISTOR WITH FEATURES OF A FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR HALL-EFFECT SENSOR

The design and characteristics of the controllable silicon resistor, c ombining features of a field-effect transistor (FET) and a semiconduct or Hall-effect sensor, are described. The parameters of the device are controlled by a two-gate metal-ilator-semiconductor-ilator-metal syst em based on silicon on ilater structure with a thin (200-nm) silicon l ayer. The device can operate both as an FET and a magnetotransistor wi th a normally conducting or normally blocked channel. The semiconducto r Hall-effect sensor has a much higher specific voltage sensitivity at a significant (greater than one order of magnitude) decrease of the o perating current than the sensitivity of commonly used GaAs-based Hall -effect sensors.