EVAPORATION OF THIN-FILMS OF SEMICONDUCTOR COMPOUNDS IN A QUASI-CLOSED VOLUME

A technique for obtaining In2Te3 and In2xGa2(1-x)Te-3 layers on InAs s ubstrates by the evaporation from independent sources of elementary co mponents in a quasi-closed volume is proposed. This method allows for the synthesis of these compounds on the substrate, or in the vapor pha se near the condensation surface without preliminary synthesis in a sp ecial evaporator-reactor. The temperatures of the sources and substrat e were determined, at which, according to the data of X-ray spectrum m icroanalysis, Auger electron spectroscopy, and electron diffraction an alysis, single-crystal layers of deposited compounds are forming.