DIELECTRIC-PROPERTIES OF ZNSEXCDS1-X ALLOY-FILMS

Al-ZnSexCdS1-x-Al structures are formed by thermal vacuum evaporation at 470 K in the entire range of composition. The frequency and tempera ture response of these structures in the frequency and temperature ran ges 1-100 KHz and 300-450 K respectively are studied. In the present s tudy Cole-Cole (permittivity) and Grant's (conductivity) representatio ns are used assuming that the present films obey Debye's dispersion re lation. From the representative Argand diagrams the equivalent electri cal circuit elements are obtained for all the samples studied. The rel axation times are in the range 10-22 mu s. The spread parameter (alpha ), a measure of width of energy barrier lies in the range 0.21-0.66.