Dh. Bao et al., ON THE CORRELATION BETWEEN CRYSTALLINITY OF PLATINUM BOTTOM ELECTRODEAND THAT OF MOD DERIVED PZT THIN-FILMS, Ferroelectrics. Letters section (Print), 24(3-4), 1998, pp. 97-104
Growth of well (111)-oriented Pt and Pt/Ti films on SiO2/Si(111) subst
rates and crystallinity of PZT films grown on the Pt(111)/SiO2/Si(111)
and Pt(111)/Ti/SiO2/Si(111) substrates have been investigated. It was
found by X-ray diffraction analysis that well (111)-oriented Pt film
with a best full-width at half maximum (FWHM) of 0.28 degrees was grow
n by the DC sputtering method. PZT films were prepared by metallo-orga
nic decomposition(MOD) on Pt(111)-coated SiO2/Si(111) substrates. The
crystallinity of the PZT films improved as the FWHM of the Pt(111) dif
fraction peak decreased. The best FWHM obtained for a PZT film grown o
n a Pt(111)/Ti/SiO2/Si(111) substrate was 0.33 degrees.