A methodology has been developed for growing InGaAsP/InP multiwell las
er heterostructures by liquid-phase epitaxy. Depth profiling using a s
econdary ion mass spectrometer was used to investigate the distributio
n profiles of the composition of multiwell laser heterostructures. Liq
uid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser he
terostructures with active regions having emission wavelengths of 1.3
and 1.55 mu m and their radiative characteristics were studied. (C) 19
98 American Institute of Physics. [S1063-7850(98)01011-8].