MULTIWELL LASER HETEROSTRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY

Citation
Ay. Leshko et al., MULTIWELL LASER HETEROSTRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY, Technical physics letters, 24(11), 1998, pp. 854-856
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
10637850
Volume
24
Issue
11
Year of publication
1998
Pages
854 - 856
Database
ISI
SICI code
1063-7850(1998)24:11<854:MLHFBL>2.0.ZU;2-P
Abstract
A methodology has been developed for growing InGaAsP/InP multiwell las er heterostructures by liquid-phase epitaxy. Depth profiling using a s econdary ion mass spectrometer was used to investigate the distributio n profiles of the composition of multiwell laser heterostructures. Liq uid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser he terostructures with active regions having emission wavelengths of 1.3 and 1.55 mu m and their radiative characteristics were studied. (C) 19 98 American Institute of Physics. [S1063-7850(98)01011-8].