MULTIWELL LASER HETEROSTRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY

A methodology has been developed for growing InGaAsP/InP multiwell las er heterostructures by liquid-phase epitaxy. Depth profiling using a s econdary ion mass spectrometer was used to investigate the distributio n profiles of the composition of multiwell laser heterostructures. Liq uid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser he terostructures with active regions having emission wavelengths of 1.3 and 1.55 mu m and their radiative characteristics were studied. (C) 19 98 American Institute of Physics. [S1063-7850(98)01011-8].