Aa. Bukharaev et al., IN-SITU EXAMINATION OF THE CHEMICAL ETCHING OF SIO2-SI STRUCTURES USING AN ATOMIC-FORCE MICROSCOPE, Technical physics letters, 24(11), 1998, pp. 863-865
First results are reported of in situ visualization of the chemical et
ching of P+-ion implanted SiO2-Si structures in an aqueous HF solution
using an atomic force microscope. The rates of SiO2 etching were dete
rmined and the kinetics of the photostimulated chemical etching of Si
were investigated. (C) 1998 American Institute of Physics, [S1063-7850
(98)01311-1].