IN-SITU EXAMINATION OF THE CHEMICAL ETCHING OF SIO2-SI STRUCTURES USING AN ATOMIC-FORCE MICROSCOPE

First results are reported of in situ visualization of the chemical et ching of P+-ion implanted SiO2-Si structures in an aqueous HF solution using an atomic force microscope. The rates of SiO2 etching were dete rmined and the kinetics of the photostimulated chemical etching of Si were investigated. (C) 1998 American Institute of Physics, [S1063-7850 (98)01311-1].