INVESTIGATION OF STRAINED INXGA1-XAS INP QUANTUM-WELLS FABRICATED BY METALORGANIC COMPOUND HYDRIDE EPITAXY/

Authors
BONDAREV AD VINOKUROV DA KAPITONOV VA KOVALENKOV OV SOKOLOVA ZN TARASOV IS
Citation
Ad. Bondarev et al., INVESTIGATION OF STRAINED INXGA1-XAS INP QUANTUM-WELLS FABRICATED BY METALORGANIC COMPOUND HYDRIDE EPITAXY/, Technical physics letters, 24(11), 1998, pp. 886-887
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
24
Issue
11
Year of publication
1998
Pages
886 - 887
Database
ISI
SICI code
1063-7850(1998)24:11<886:IOSIIQ>2.0.ZU;2-4
Abstract
An investigation was made of the possibility of using reduced-pressure MOC hydride epitaxy to fabricate highly strained (compressive stress) InxGa1-xAs/In0.53Ga0.47As quantum wells on indium phosphide (100) sub strates. The photoluminescence properties of these heterostructures we re investigated. It was shown that these heterostructures are potentia lly useful for laser diodes emitting in the 1.5-2 mu m range, which is important for environmental monitoring. (C) 1998 American Institute o f Physics. [S1063-7850(98)02211-31].