The bipolar quantum drift-diffusion model

Citation
Chen," Xiu Qing",chen," Li, The bipolar quantum drift-diffusion model, Acta mathematica Sinica. English series (Print) , 25(4), 2009, pp. 617-638
ISSN journal
14398516
Volume
25
Issue
4
Year of publication
2009
Pages
617 - 638
Database
ACNP
SICI code
Abstract
A fourth order parabolic system, the bipolar quantum drift-diffusion model in semiconductor simulation, with physically motivated Dirichlet-Neumann boundary condition is studied in this paper. By semidiscretization in time and compactness argument, the global existence and semiclassical limit are obtained, in which semiclassical limit describes the relation between quantum and classical drift-diffusion models. Furthermore, in the case of constant doping, we prove the weak solution exponentially approaches its constant steady state as time increases to infinity.