IMPURITY-DOPING IN HIGH-T-C SUPERCONDUCTORS - ANDERSON LOCALIZATION VERSUS INTERACTION EFFECT

Citation
Ym. Malozovsky et Jd. Fan, IMPURITY-DOPING IN HIGH-T-C SUPERCONDUCTORS - ANDERSON LOCALIZATION VERSUS INTERACTION EFFECT, Journal of the Korean Physical Society, 33(5), 1998, pp. 589-593
Citations number
7
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
33
Issue
5
Year of publication
1998
Pages
589 - 593
Database
ISI
SICI code
0374-4884(1998)33:5<589:IIHS-A>2.0.ZU;2-4
Abstract
A perturbation approach is adopted to deal with localization in a diso rdered metal. It is shown that in the case of a given impurity potenti al a small disorder leads to localization in 2D as well as in 1D, and causes the weak localization in 3D. As a result, in the system the loc alized magnetic moments appear and the ferromagnetic phase transition can happen. In contrast, in the case of the screened impurity potentia l (interacting electrons) the disorder effect on polarizablility can s ignificantly be suppressed by the Coulomb vertex corrections to the im purity vertex as shown.