INVESTIGATION OF THE CURRENT INJECTION PROPERTIES OF OHMIC SPIKES IN NANOSTRUCTURES

Citation
Rp. Taylor et al., INVESTIGATION OF THE CURRENT INJECTION PROPERTIES OF OHMIC SPIKES IN NANOSTRUCTURES, Superlattices and microstructures, 24(5), 1998, pp. 337-345
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
24
Issue
5
Year of publication
1998
Pages
337 - 345
Database
ISI
SICI code
0749-6036(1998)24:5<337:IOTCIP>2.0.ZU;2-7
Abstract
We investigate the mechanism by which annealed Ni-Au-Ge metallizations establish electrical contact to the two-dimensional electron gas (2DE G) in AlGaAs/GaAs heterostructures and we assess the suitability of th is contact process fbr defining patterned contacts in semiconductor na nostructures. We present a picture where electrons are injected from a n array of spikes which extend below the surface-metal pattern to pene trate the 2DEG and the associated quantum waves determine the contact resistance through phase-coherent interference processes at low temper atures. To probe this mesoscopic current injection process, we induce an evolution between two distinct geometries traditionally used to cha racterize semiconductor systems-the Corbino disc and the Hall bar. We also discuss refinements to the injection process which will facilitat e the incorporation of shaped ohmic contacts into future nanostructure designs. (C) 1998 Academic Press.