MODULATION-DOPED SILICATE GLASS DEPOSITED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

Authors
ILG M KRAXENBERGER M URAM K SANDLER N PARKS C NGUYEN S
Citation
M. Ilg et al., MODULATION-DOPED SILICATE GLASS DEPOSITED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Superlattices and microstructures, 24(5), 1998, pp. 385-388
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
24
Issue
5
Year of publication
1998
Pages
385 - 388
Database
ISI
SICI code
0749-6036(1998)24:5<385:MSGDBL>2.0.ZU;2-7
Abstract
We demonstrate the synthesis of modulation-doped silicate glass. Secon dary ion mass spectroscopy measurements show the B and P concentration s to strongly oscillate on a nanometre-scale. This finding is confirme d by scanning-electron microscopy. Finally we show that this novel typ e of material has gap-fill characteristics superior to those of conven tional borophosphosilicate glass currently in use in the semiconductor industry. (C) 1998 Academic Press.