A NEW EXTRACTION METHOD FOR THE 2-PARAMETER FET TEMPERATURE NOISE MODEL

This paper presents a direct extraction method for the associated nois e temperatures T-d and T-g in the field-effect transistor (FET) temper ature noise model. The method is related to nodal analysis of circuits . T-d and T-g are extracted from the small-signal model parameters and the noise parameters of the device. It is also theoretically shown th at there exist source admittances that cancel the thermal noise contri bution at the output from either T-d or T-g in the model. Finally, a c ommercially available GaAs pseudomorphic high electron-mobility transi stor (pHEMT) is measured and modeled for a wide range of bias points. Comparisons between measured and modeled noise parameters are presente d in the 2-26-GHz frequency range.