V-BAND SWITCH CONFIGURATION BASED ON SUCCESSIVE RESONANCES SINGLE POLE DOUBLE THROW

This letter concerns the design consideration and performance of a V-b and monolithic T/R switch for millimeter-wave wireless networks applic ations. The developed switch IC has a structure using successive reson ance's single pole double throw (SRSPDT). The resonances are made with the FET structure and transmission fines in parallel. The switching f unction is ensured by heterojunction FETs (HJFETs). With a control vol tage of 0 V/-3 V, the developed T/R switch exhibits a minimum insertio n loss of 5 dB, able to be reduced by 2 dB with another proposed confi guration, a minimum isolation of 40 dB, over 5 GHz centered at 63.8 GH z. The monolithic T/R switch chip size is 1.9 mm x 1 mm. Performance i mprovement is at the expense of the size of the chip. (C) 1998 John Wi ley & Sons, Inc.