THRESHOLD TEMPERATURE-DEPENDENCE OF LATERAL-CAVITY QUANTUM-DOT LASERS

Authors
ZOU Z SHCHEKIN OB PARK G HUFFAKER DL DEPPE DG
Citation
Z. Zou et al., THRESHOLD TEMPERATURE-DEPENDENCE OF LATERAL-CAVITY QUANTUM-DOT LASERS, IEEE photonics technology letters, 10(12), 1998, pp. 1673-1675
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
10
Issue
12
Year of publication
1998
Pages
1673 - 1675
Database
ISI
SICI code
1041-1135(1998)10:12<1673:TTOLQL>2.0.ZU;2-B
Abstract
The threshold temperature dependence for quantum-dot (QD) lasers with different degrees of inhomogeneous broadening are compared. By reducin g the inhomogeneous linewidth, the ''negative'' temperature dependence due to thermal coupling of the QD ensemble can be nearly eliminated. Stable ground state lasing is obtained with a single-layer QD density of similar to 5 x 10(10) cm(-2) for a long cavity laser, while lower g ain QD's and shorter cavity lengths lase on well-resolved higher energ y levels.