HIGH-BRIGHTNESS VISIBLE (660 NM) RESONANT-CAVITY LIGHT-EMITTING DIODE

Visible (660 nm) resonant-cavity light-emitting diodes (RCLED's) have been fabricated. The top-emitting, planar devices employed two AlGaAs- AlAs-Bragg mirrors and GaInP-AlGaInP quantum-well active layers. The d evice performance was characterized as ai function of the device diame ters, ranging from 24 to 202 mu m. The larger devices exhibited a near ly linear increase of output power with injected current with 8,4-mW e mission at 120 mA, A maximum external efficiency of 4.8% was measured at 4 mA on the 84-mu m aperture devices. All devices exhibited a narro w emission at 659-661 nm with a linewidth around 3 nm, The results sho w that RCLED's are promising low-cost light sources for plastic fiber transmission as well as display applications.