LATERALLY COUPLED STRAINED MQW RIDGE-WAVE-GUIDE DISTRIBUTED-FEEDBACK LASER-DIODE FABRICATED BY WET-DRY HYBRID ETCHING PROCESS

The fabrication and the characteristics of the laterally coupled GaInA sP-InP quantum-well ridge waveguide distributed-feedback (DFB) lasers are presented, The electron beam (EB) lithography and the wet and dry hybrid etching technique have been used to fabricate the deep grating structures for the DFB lasers on and beside the sidewalls of the narro w ridge waveguide. The threshold current was 18.5 mA at 20 degrees C, and the sidemode suppression ratios (SMSR's) were ensured to be more t han 40 dB for as-cleaved devices with various cavity lengths, The cont inuous-wave output powers of over 15 mW/facet have been observed, whil e transverse and longitudinal modes have remained in single made at th is output level.