TEMPERATURE-DEPENDENT CHARACTERISTICS OF 1.3-MU-M ALGAINAS-INP LASERSWITH MULTIQUANTUM BARRIERS AT THE GUIDING LAYERS

Strain-compensated 1.3-mu m AlGaInAs-InP multiquantum-well (MQW) laser s with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic tempe rature as high as 95 K and degradation in slope efficiency as low as - 1.06 dB in the temperature range from 25 degrees C to 75 degrees C. Th e characteristic temperature of transparency current density is deduce d to be 129 K, It is also found that the internal loss increases slowl y with temperature, while the temperature dependence of the internal q uantum efficiency dominates the degradation of the external quantum ef ficiency due to the degradation of the stimulated recombination, and s ignificant increase of electron and hole leakage at high temperature.