RESONANT-CAVITY LONGWAVE SIGE-SI PHOTODETECTOR USING A BURIED SILICIDE MIRROR

We describe a resonant cavity detector which uses epitaxial p-type SiG e-Si quantum wells for absorption which are epitaxially grown above a high reflectance tungsten silicide layer. The device operates in the 8 -12-mu m band in normal incidence and exhibits a x8 enhancement in its peak photoresponse when compared to a nonresonant control device. The black body responsivity is comparable to current n-GaAs-AlGaAs detect ors at 1 V making it suitable for integration in a monolithic Si-based focal plane array. Ways to optimize the device design to achieve impr oved performance are discussed.