A full scale microscopic calculation of Auger rates is performed on Si
xGe1-x/Si superlattice structures with widely different parameters. We
show that Auger rates are reasonably independent of superlattice para
meters with Auger rates of some two orders of magnitude larger than th
at of bulk silicon. Bandstructure is found to be the dominant factor i
n the calculation and a simple geometrical model is devised to investi
gate different types of structure. (C) 1998 Elsevier Science B.V. All
rights reserved.