PHOTOELECTRON HOLOGRAPHY STUDIES OF BI ON SI(111)

Citation
Jm. Roesler et al., PHOTOELECTRON HOLOGRAPHY STUDIES OF BI ON SI(111), Surface science, 417(1), 1998, pp. 1143-1147
Citations number
25
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
417
Issue
1
Year of publication
1998
Pages
1143 - 1147
Database
ISI
SICI code
0039-6028(1998)417:1<1143:PHSOBO>2.0.ZU;2-U
Abstract
Photoelectron holography is applied to Bi atoms adsorbed on Si(111) fo r a determination of the three-dimensional atomic structure. Instead o f measuring the absolute intensity as a function of photon energy as i s traditionally done, a differential measurement is carried out to yie ld the logarithmic derivative of the intensity. This leads to intensit y self-normalization, and significantly improves the accuracy. The res ulting images show a well-resolved trimer structure for the adsorption geometry. (C) 1998 published by Elsevier Science B.V. All rights rese rved.