M. Castiglioni et al., GAS-PHASE ION CHEMISTRY IN METHYLGERMANE AND METHYLGERMANE SILANE/, International journal of mass spectrometry and ion processes, 180, 1998, pp. 277-283
Citations number
22
Categorie Soggetti
Spectroscopy,"Physics, Atomic, Molecular & Chemical
The rate constants of the gas phase ion/molecule reactions in CH3CeH3
alone and in CH3GeH3/SiH4 mixture have been determined by ion trap mas
s spectrometry and compared with those obtained in GeH4 and CH3SiH3 al
one, and in CeH4/SiH4 mixture. Collision rate constants have been calc
ulated and efficiencies determined. Chain propagation of ions containi
ng Ge, Si, and, possibly C, important in the radiolytical preparation
of materials of interest in photovoltaic technology, occurs through io
ns such as GeSiCHn+ (n = 4, 6) from Si2Hn+ (n = 2, 4) reacting with me
thylgermane and GeSi2CHn+ (n = 6, 7) from Si3Hn+ (n = 4, 5) reacting w
ith methylgermane at rather high rates. The experimental conditions to
increase yield of formation of ions with silicon and germanium are di
scussed. (C) 1998 Elsevier Science B.V.