DETERMINATION OF FLOW PATTERN DEFECT AREA BY MU-PHOTOCONDUCTIVITY DECAY LIFETIME MEASUREMENT

Citation
By. Lee et al., DETERMINATION OF FLOW PATTERN DEFECT AREA BY MU-PHOTOCONDUCTIVITY DECAY LIFETIME MEASUREMENT, JPN J A P 2, 37(8A), 1998, pp. 902-904
Citations number
17
Categorie Soggetti
Physics, Applied
Volume
37
Issue
8A
Year of publication
1998
Pages
902 - 904
Database
ISI
SICI code
Abstract
Flow pattern defects (FPDs), the decrease in interstitial oxygen conce ntration during heat treatment and lr-photoconductivity decay (mu-PCD) lifetime were measured precisely in the radial direction using sample s with different grown-in defect densities and defect generation areas . In the inner and/or outer region adjacent to the rim of the FPD area where FPD density was zero, a peak and/or a valley of mu-PCD lifetime distribution were observed. It was found that the mu-PCD lifetime dis tribution depended on the behavior of oxygen precipitation, especially on anomalous oxygen precipitation (AOP). In the case of FPD area larg er than about 175 mm in diameter, the edge effect became dominant and it was difficult to observe a peak or a valley in the mu-PCD lifetime distribution due to AOP. The FPD area, however, could be monitored by the mu-PCD lifetime measurement. The relationship between mu-PCD lifet ime and oxygen precipitation rate was also interpreted.