ELECTRICAL-PROPERTIES OF LA0.7SR0.3COO3 PB(ZR0.52TI0.48)O-3/LA0.7SR0.3COO3 THIN-FILM CAPACITORS FORMED ON MGO SUBSTRATES USING THE SOL-GEL METHOD/

Authors
YOON SM TOKUMITSU E ISHIWARA H
Citation
Sm. Yoon et al., ELECTRICAL-PROPERTIES OF LA0.7SR0.3COO3 PB(ZR0.52TI0.48)O-3/LA0.7SR0.3COO3 THIN-FILM CAPACITORS FORMED ON MGO SUBSTRATES USING THE SOL-GEL METHOD/, JPN J A P 2, 37(8A), 1998, pp. 936-938
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
37
Issue
8A
Year of publication
1998
Pages
936 - 938
Database
ISI
SICI code
Abstract
Sol-gel derived La0.7Sr0.3CoO3/Pb(Zr0.52Ti0.18)O-3 (PZT)/La0.7Sr0.3CoO 3(LSCO) ferroelectric capacitors were fabricated on MgO(100) substrate s. In order to avoid degradation of the PZT film during the high-tempe rature crystallization process of the top LSCO electrode, amorphous ph ase LSCO was used in the sol-gel method. These capacitors showed good ferroelectric hysteresis loops and no significant degradation of switc hable polarization was observed after 1 x 10(9) switching cycles.