EPITAXIAL-GROWTH MECHANISM OF CHEMICAL-VAPOR-DEPOSITED ANATASE ON STRONTIUM-TITANATE SUBSTRATE

Titanium dioxide films were chemically prepared on (001) single-crysta l strontium titanate, SrTiO3, using a vapor deposition apparatus opera ting under atmospheric pressure with titanium tetra-isopropoxide, At a substrate temperature of 400 degrees C, titanium dioxide grew epitaxi ally with lateral growth of steps, as well as multinucleation was obse rved during the initial growth process, i.e., the so-called Stranski-K rastanov growth. As a result, the surface of strontium titanate was co mpletely covered by titanium dioxide steps with an average lateral gro wth rate of 100 nm/s, followed by multinucleation growth, The nuclei d eveloped in a number of highly oriented crystallites having well defin ed facets. X-ray diffractometry and transmission electron microscopy r evealed that these crystallites consisted of [001]-oriented anatase-ty pe structure.