IMPROVEMENTS IN FIBER ALIGNMENT TOLERANCE USING CHEMICALLY ETCHED MONOLITHICALLY INTEGRATED MICROLENSES ON INGAAS-INP PIN PHOTODETECTORS

Citation
M. Madhav et al., IMPROVEMENTS IN FIBER ALIGNMENT TOLERANCE USING CHEMICALLY ETCHED MONOLITHICALLY INTEGRATED MICROLENSES ON INGAAS-INP PIN PHOTODETECTORS, Electronics Letters, 33(10), 1997, pp. 891-892
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
33
Issue
10
Year of publication
1997
Pages
891 - 892
Database
ISI
SICI code
0013-5194(1997)33:10<891:IIFATU>2.0.ZU;2-U
Abstract
The monolithic integration of a microlense with an InGaAs:InP pin phot odetector using a simple two-step wet chemical etching process is repo rted. Using this technology, improvements in fibre alignment tolerance s from 28 to 56 mu m were achieved for photodetectors with a 25 mu m d iameter active area.