HIGH-POWER TAPERED SUPERLUMINESCENT DIODES USING NOVEL ETCHED DEFLECTORS

Authors
MIDDLEMAST I SARMA J YUNUS S
Citation
I. Middlemast et al., HIGH-POWER TAPERED SUPERLUMINESCENT DIODES USING NOVEL ETCHED DEFLECTORS, Electronics Letters, 33(10), 1997, pp. 903-904
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
10
Year of publication
1997
Pages
903 - 904
Database
ISI
SICI code
0013-5194(1997)33:10<903:HTSDUN>2.0.ZU;2-K
Abstract
A tapered geometry high power superluminescent light emitting diode (T SLED) is described. Since it is found that an absorbing region by itse lf is inadequate for sufficiently reducing feedback, a simple but very effective etched deflector has been incorporated into the TSLED desig n, enabling output powers exceeding 500mW to be obtained.