MEASUREMENT OF VERY LONG GENERATION LIFETIMES IN SI AND SIGE EPI-LAYERS PRODUCED BY LPCVD USING MOS CAPACITORS FORMED BY PLASMA ANODIZATION

Authors
WU ZY HALL S BONAR JM PARKER GJ
Citation
Zy. Wu et al., MEASUREMENT OF VERY LONG GENERATION LIFETIMES IN SI AND SIGE EPI-LAYERS PRODUCED BY LPCVD USING MOS CAPACITORS FORMED BY PLASMA ANODIZATION, Electronics Letters, 33(10), 1997, pp. 909-911
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
10
Year of publication
1997
Pages
909 - 911
Database
ISI
SICI code
0013-5194(1997)33:10<909:MOVLGL>2.0.ZU;2-H
Abstract
The authors report results showing long minority carrier generation li fetime (> 30 mu s) in Si and SiGe epitaxial layers grown by LPCVD. The measurements were conducted on MOS capacitors realised by plasma oxid ation at temperatures below 150 degrees C. Capacitance voltage measure ments showed very low MOS interface state densities (< 3 x 10(10)eV(-1 )cm(-2)). Oxide breakdown field strength was in excess of 8MV/cm which together with the long lifetimes, demonstrate the high quality of the epitaxial layers and oxide.