TEMPERATURE-DEPENDENCE OF TURN-ON PROCESS IN 4H-SIC THYRISTORS

Authors
DYAKONOVA NV LEVINSHTEIN ME PALMOUR JW RUMYANTSEV SL SINGH R
Citation
Nv. Dyakonova et al., TEMPERATURE-DEPENDENCE OF TURN-ON PROCESS IN 4H-SIC THYRISTORS, Electronics Letters, 33(10), 1997, pp. 914-915
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
10
Year of publication
1997
Pages
914 - 915
Database
ISI
SICI code
0013-5194(1997)33:10<914:TOTPI4>2.0.ZU;2-E
Abstract
The turn-on process in 4H-SiC thyristors with a forward blocking volta ge U-b similar or equal to 400V has been investigated in the temperatu re rang 160-500K. The time constant of the current rise tau(r) decreas es monotonically with temperature, increasing from tau(r) = 63ns at T = 160K to tau(r) = 1.9ns at T = 495K.