THERMAL AND NONTHERMAL MELTING OF GALLIUM-ARSENIDE AFTER FEMTOSECOND LASER EXCITATION

Authors
SOKOLOWSKITINTEN K BIALKOWSKI J BOING M CAVALLERI A VONDERLINDE D
Citation
K. Sokolowskitinten et al., THERMAL AND NONTHERMAL MELTING OF GALLIUM-ARSENIDE AFTER FEMTOSECOND LASER EXCITATION, Physical review. B, Condensed matter, 58(18), 1998, pp. 11805-11808
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
18
Year of publication
1998
Pages
11805 - 11808
Database
ISI
SICI code
0163-1829(1998)58:18<11805:TANMOG>2.0.ZU;2-Z
Abstract
Thermal- and nonthermal melting in gallium arsenide after femtosecond laser excitation has been investigated by means of time resolved micro scopy. Electronic melting within a few hundred femtoseconds is observe d for rather strong excitation and the data reveal a distinct threshol d fluence of 150 mJ/cm(2) for this nonthermal process. Below that thre shold melting occurs on a 100 ps time scale and is of thermal nature. Using a simple numerical model we describe this type of the phase tran sition as heterogeneous melting under strongly overheated conditions. [S0163-1829(98)51142-3].