E. Lampin et al., FREQUENCY-DEPENDENT HOPPING CONDUCTIVITY BETWEEN SILICON NANOCRYSTALLITES - APPLICATION TO POROUS SILICON, Physical review. B, Condensed matter, 58(18), 1998, pp. 12044-12048
We show how it is possible to perform a full calculation of the freque
ncy-dependent hopping conductivity of a disordered array of semiconduc
tor crystallites once their statistical distribution is known. We firs
t apply this to a weakly disordered distribution of silicon spheres co
nnected by silicon bridges and show the importance of the topology in
determining the activation energy characteristic of the temperature de
pendence. We then use a model distribution to simulate the case of por
ous silicon and from this get a coherent description of various relate
d properties. Finally, we emphasize the applicability of the method to
determine the hopping conductivity of artificially built semiconducto
r nanostructures. [S0163-1829(98)01842-6].