A STUDY OF ION-IMPLANTED SEMICONDUCTOR NANOSTRUCTURES

We report on the experimental evidence for quantum confinement in the transport properties of quantum dots fabricated by a novel technique. This technique allows us to confine the electron motion only in the qu antum dot, leading to 3D-0D-3D resonant tunnelling transport. A theore tical framework has been developed at the same time to investigate 3D- 0D-3D transport devices. The theoretical results agree well with the e xperimental observations, opening the possibility of directly probing the wavefunctions of 0D structures.