GEOMETRICAL AND ELECTRONIC-STRUCTURE OF THE MBE-PREPARED GAAS(113)A SURFACE

Authors
SETZER C PLATEN J GENG P RANKE W JACOBI K
Citation
C. Setzer et al., GEOMETRICAL AND ELECTRONIC-STRUCTURE OF THE MBE-PREPARED GAAS(113)A SURFACE, Surface science, 377(1-3), 1997, pp. 125-129
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
377
Issue
1-3
Year of publication
1997
Pages
125 - 129
Database
ISI
SICI code
0039-6028(1997)377:1-3<125:GAEOTM>2.0.ZU;2-X
Abstract
The GaAs (113)A surface was prepared by molecular beam epitaxy and inv estigated in situ by means of low-energy electron diffraction, surface core level spectroscopy and angle-resolved valence band photoemission . One stable, (8 x 1) reconstructed surface was prepared. Surface core level shifts were observed for As 3d (530 meV) and Ga (-460 meV, 360 meV) which support a recently proposed model [1]. Two surface resonanc es were observed at -1.1 and -3.7 eV below the valence band maximum.