A palladium/porous silicon hydrogen sensor has been developed using fo
r the first time the measurement of contact potential difference varia
tions (CPD). The CPD amplitude and speed of response is shown to depen
d on the type of silicon substrate, the etching current density used f
or porous silicon preparation and subsequent oxidation. The temporal r
esponse features are compared with a Pd/silicon structure and are disc
ussed in terms of a kinetic equation for adsorbtion-desorbtion reactio
ns. The improvement of CPD response in Pd/porous silicon sensor can be
explained by a more developed surface under the Pd coating, by a poro
us silicon surface covered by hydride species or by creation of a thic
ker Schottky layer in comparison with Pd/Si contacts. (C) 1998 Elsevie
r Science B.V. All rights reserved.