E. Neufeld et al., ROOM-TEMPERATURE 1.54 MU-M ELECTROLUMINESCENCE FROM ERBIUM-DOPED SI SIGE WAVE-GUIDES/, Applied physics letters, 73(21), 1998, pp. 3061-3063
In this letter, we demonstrate room-temperature electroluminescence fr
om erbium ions in SiGe waveguide structures. Molecular beam epitaxy wa
s employed to deposit SiGe layers doped with erbium and oxygen on (100
)Si. Samples were processed as mesa waveguides and contacted to allow
electrical pumping of the erbium ions. The luminescence was collected
from the waveguides by a confocal microscope revealing emission from t
he end facet with a narrow spatial distribution. (C) 1998 American Ins
titute of Physics. [S0003-6951(98)02242-6].