ROOM-TEMPERATURE 1.54 MU-M ELECTROLUMINESCENCE FROM ERBIUM-DOPED SI SIGE WAVE-GUIDES/

In this letter, we demonstrate room-temperature electroluminescence fr om erbium ions in SiGe waveguide structures. Molecular beam epitaxy wa s employed to deposit SiGe layers doped with erbium and oxygen on (100 )Si. Samples were processed as mesa waveguides and contacted to allow electrical pumping of the erbium ions. The luminescence was collected from the waveguides by a confocal microscope revealing emission from t he end facet with a narrow spatial distribution. (C) 1998 American Ins titute of Physics. [S0003-6951(98)02242-6].