STRUCTURAL DISORDER-INDUCED IN HYDROGENATED AMORPHOUS-SILICON BY LIGHT SOAKING

We show, using variable coherence transmission electron microscopy, th at light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are asso ciated with instability in the as-deposited material. We suggest that improved immunity to Staebler-Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous rando m network. (C) 1998 American Institute of Physics. [S0003-6951(98)0294 7-7].