T. Cabioch et al., INFLUENCE OF THE IMPLANTATION PARAMETERS ON THE MICROSTRUCTURE OF CARBON ONIONS PRODUCED BY CARBON ION-IMPLANTATION, Applied physics letters, 73(21), 1998, pp. 3096-3098
We study the influence of implantation parameters (temperature, implan
ted dose, and current density) on the microstructure of carbon onions
produced by carbon ion implantation into silver substrates held at ele
vated temperature. Carbon onions are synthesized only for temperatures
higher than 400 degrees C. An increase of the average diameter of the
onions as well as a structure presenting less defects are observed wh
en the temperature increases from 500 to 800 degrees C. For implantati
on doses varying from 5 x 10(16) cm(-2) to 5 x 10(17) cm(-2), we obser
ve an increase of the average diameter, spherical onions with a very s
harp distribution in size being obtained for doses less than or equal
to 10(17) cm(-2). We also vary the current density of the carbon ion b
eam from 2 to 45 mu A cm(-2), but this parameter does not induce any v
isible microstructural evolution of the onions. From the results prese
nted here, one can now carry out studies related to the evolution of t
he physical properties of well defined size carbon onions having a con
trolled amount of defects. (C) 1998 American Institute of Physics. [S0
003-6951(98)04844-X].