RECOMBINATION PROCESSES IN INXGA1-XN LIGHT-EMITTING-DIODES STUDIED THROUGH OPTICALLY DETECTED MAGNETIC-RESONANCE

Optically detected magnetic resonance (ODMR) has been observed on phot oluminescence from InGaN light-emitting diodes (LEDs) under low photoe xcitation conditions. The samples have the usual p-i-n structure but w ithout etching or metallizations. Distinct ODMR features from the reco mbining electron and hole are found with strength that indicates signi ficant charge separation and long lifetimes (>100 ns). The electron an d hole g tensors are determined for green and extra-blue LEDs. The rec ombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at p otential minima in the QW but spatially separated from the electrons. (C) 1998 American Institute of Physics. [S0003-6951(98)04347-2].