LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON

We have studied n-type silicon containing gold and gold-hydrogen compl exes using high-resolution ''Laplace'' deep-level transient spectrosco py. This technique has enabled two quite distinct electron emission ra tes to be observed at temperatures between 240 and 300 K. These are as sociated with the gold acceptor and the level referred to as G4, which is observed when hydrogen and gold are present in silicon. The gold a cceptor has a measured activation energy for electron emission of 558/-8 meV, and the G4 state of 542+/-8 meV. The directly measured electr on capture cross section for G4 is determined to be 0.6+/-0.1 sigma(n( gold acceptor)) at 275 K from which it is inferred gold that the state is acceptor-like. (C) 1998 American Institute of Physics. [S0003-6951 (98)01447-8].