DETERMINATION OF THE CONCENTRATION AND TEMPERATURE-DEPENDENCE OF THE FUNDAMENTAL ENERGY-GAP IN ALXIN1-XSB

Authors
DAI N BROWN F DOEZEMA RE CHUNG SJ GOLDAMMER KJ SANTOS MB
Citation
N. Dai et al., DETERMINATION OF THE CONCENTRATION AND TEMPERATURE-DEPENDENCE OF THE FUNDAMENTAL ENERGY-GAP IN ALXIN1-XSB, Applied physics letters, 73(21), 1998, pp. 3132-3134
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
21
Year of publication
1998
Pages
3132 - 3134
Database
ISI
SICI code
0003-6951(1998)73:21<3132:DOTCAT>2.0.ZU;2-N
Abstract
We use transmission spectroscopy to determine the energy gap for the A lxIn1-xSb alloy system in the Al concentration range from 0% to 25% fr om cryogenic to room temperature. The samples are epitaxial layers gro wn by molecular beam epitaxy on GaAs substrates. Our room temperature results are compared to those from two earlier studies. In our Al conc entration range, we find a linear change of energy gap with alloy latt ice constant. (C) 1998 American Institute of Physics. [S0003-6951(98)0 3247-1].