SIZE-QUANTIZED CDS FILMS IN THIN-FILM CUINS2 SOLAR-CELLS

Semiconductor quantum dots and wires are the subject of great interest , mainly due to their size- dependent electronic structures, in partic ular increased band gap and therefore optoelectronic properties. We ha ve electrodeposited films of size-quantized CdS (similar to 4 to 5 nm cross section by 15 nm height) as a buffer layer on CuInS2. The result ing CuInS/CdS thin-film solar cells gave increased photocurrents and h igher light-to-electricity conversion efficiencies (>11%) than those m ade with conventional nonquantized CdS films. This was due mainly to t he increased band gap of the quantized CdS, allowing more light to rea ch the active CuInS2 layer. (C) 1998 American Institute of Physics. [S 0003-6951(98)02647-3].