CHARACTERISTICS OF INGAAS QUANTUM-DOT INFRARED PHOTODETECTORS

Authors
XU SJ CHUA SJ MEI T WANG XC ZHANG XH KARUNASIRI G FAN WJ WANG CH JIANG J WANG S XIE XG
Citation
Sj. Xu et al., CHARACTERISTICS OF INGAAS QUANTUM-DOT INFRARED PHOTODETECTORS, Applied physics letters, 73(21), 1998, pp. 3153-3155
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
21
Year of publication
1998
Pages
3153 - 3155
Database
ISI
SICI code
0003-6951(1998)73:21<3153:COIQIP>2.0.ZU;2-R
Abstract
A quantum dot infrared photodetector (QDIP) consisting of self-assembl ed InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/ W at 9.2 mm was obtained for nonpolarized incident light on the detect or with a 45 degrees angle facet at 60 K. The QDIPs exhibit some uniqu e electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength . (C) 1998 American Institute of Physics. [S0003-6951(98)01547-2].