THE ENHANCEMENT FACTOR OF HYPER-RAMAN SCATTERING FROM AN INHOMOGENEOUS SEMICONDUCTOR SURFACE

Authors
IPATOVA IP MASLOV AY UDOD LV BENEDEK G PANZARINI G
Citation
Ip. Ipatova et al., THE ENHANCEMENT FACTOR OF HYPER-RAMAN SCATTERING FROM AN INHOMOGENEOUS SEMICONDUCTOR SURFACE, Surface science, 377(1-3), 1997, pp. 436-439
Citations number
4
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
377
Issue
1-3
Year of publication
1997
Pages
436 - 439
Database
ISI
SICI code
0039-6028(1997)377:1-3<436:TEFOHS>2.0.ZU;2-V
Abstract
Hyper-Raman scattering (HRS) of light from the inhomogeneous surface r egion of a semiconductor is considered theoretically. The HRS enhancem ent factor induced by band-bending inhomogeneities in a heavily doped, degenerate semiconductor is evaluated. It is argued that such enhance ment effects can be exploited for special applications, e.g., for a mi cro-HRS induced by a metal tip on a semiconductor surface.