We have performed ab initio pseudopotential calculations to investigat
e the bonding and atomic geometry of the S/InP(110) system. For a full
non-diffused monolayer coverage we find that S atoms form the epitaxi
ally continued layer structure. Among various geometrical possibilitie
s for non-diffused half-monolayer coverage, we find that the S atoms o
ccupy the interchain bridging site. Our results are compared with rece
nt X-ray standing wave measurements.