CHARACTERISTICS OF SPECTRAL-HOLE BURNING OF INAS SELF-ASSEMBLED QUANTUM DOTS

Spectral-hole burning of InAs self-assembled quantum dots (QD's) embed ded in pin-diode was observed. At 5 K, a narrow hole with width of les s than 1 mm was observed and the hole depth increased as electric fiel d increased with the writing light power of 8 mW. The hole was observe d up to 40 K. The spectral hole was broadened as the writing light pow er increases from 8 to 20 mW, Spectral-hole width at the 8 mW was well fitted with the convolution integral of Gaussian distribution for rea ding light and Lorentzian distribution for absorption change taking in to account homogeneous broadening of InAs QD's of less than or equal t o 80 mu eV, Spectral-hole lifetime at the 8 mW was estimated to be in the order of 10(-6) s. Optical absorption spectrum of 15-stacked InAs QD structure was also observed at 77 K and 300 K.