SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF BISMUTH GROWTH ON SI(100) SURFACES

Authors
NAITOH M SHIMAYA H NISHIGAKI S OISHI N SHOJI F
Citation
M. Naitoh et al., SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF BISMUTH GROWTH ON SI(100) SURFACES, Surface science, 377(1-3), 1997, pp. 899-903
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
377
Issue
1-3
Year of publication
1997
Pages
899 - 903
Database
ISI
SICI code
0039-6028(1997)377:1-3<899:SOOBGO>2.0.ZU;2-K
Abstract
We report the results of a scanning tunneling microscopy investigation of the initial process of bismuth thin-film growth on Si(100) surface s. Bismuth atoms adsorbed on the Si(100) surface at 400 degrees C form a film of diamond-like structure with a thickness of more than 2 laye rs, under the influence of the substrate structure. The top layer of t he bismuth film shows (2 x n) (n similar or equal to 6) periodicity. I n a bismuth desorption process, a new surface phase appears, which has linear chains of bismuth dimers perpendicular to substrate-Si step ed ges.