GROWTH OF CU FILMS ON ANNEALED CU O/RU(0001) STUDIED BY STM/

Citation
H. Wolter et al., GROWTH OF CU FILMS ON ANNEALED CU O/RU(0001) STUDIED BY STM/, Surface science, 377(1-3), 1997, pp. 983-987
Citations number
8
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
377
Issue
1-3
Year of publication
1997
Pages
983 - 987
Database
ISI
SICI code
0039-6028(1997)377:1-3<983:GOCFOA>2.0.ZU;2-0
Abstract
We have investigated the growth of Cu at 400 K on annealed Cu films in itially grown on O-precovered Ru(0001) by means of STM. Annealing the layer-like Cu films on O/Ru(0001) at 700 K results in a Stranski-Krast anov film morphology. Besides three-dimensional islands a two-dimensio nal base layer of Cu is formed which is three monolayers thick and cov ered by an O/Cu surfactant structure. After Cu deposition on the base layer an enhanced nucleation density is found compared to the layer-li ke Cu films on O/Ru(0001). The film consists of two-dimensional island s of uniform size. Compared to the growth of Cu on O/Ru(0001) at 400 K a more perfect layer-by-layer growth is induced.