We have investigated the growth of Cu at 400 K on annealed Cu films in
itially grown on O-precovered Ru(0001) by means of STM. Annealing the
layer-like Cu films on O/Ru(0001) at 700 K results in a Stranski-Krast
anov film morphology. Besides three-dimensional islands a two-dimensio
nal base layer of Cu is formed which is three monolayers thick and cov
ered by an O/Cu surfactant structure. After Cu deposition on the base
layer an enhanced nucleation density is found compared to the layer-li
ke Cu films on O/Ru(0001). The film consists of two-dimensional island
s of uniform size. Compared to the growth of Cu on O/Ru(0001) at 400 K
a more perfect layer-by-layer growth is induced.