MONTE-CARLO SIMULATION OF EPITAXIAL-GROWTH ON A (111) LAYER WITH MISMATCH

A high-temperature deposition of adatoms on a substrate with or withou t lattice mismatch from -10% to +10%, followed by slow cooling to a gi ven temperature, is simulated by means of a Monte Carlo algorithm with Lennard-Jones interatomic pair potentials. Stranski-Krastanov growth is always observed with a lateral island size controlled by the lattic e mismatch, while the deposition mode acts strongly on the island slop e. Complete healing of the island structure never occurs before the te nth layer. The interlayer distance undergoes oscillations as a functio n of the layer number. This is observed for a +/-10% mismatch as well as for a -5% mismatch.