TETRAMER FORMATION ON SI(100)-(2X1) DURING CVD GROWTH FROM SIH4

Authors
SPITZMULLER J FEHRENBACHER M RAUSCHER H BEHM RJ
Citation
J. Spitzmuller et al., TETRAMER FORMATION ON SI(100)-(2X1) DURING CVD GROWTH FROM SIH4, Surface science, 377(1-3), 1997, pp. 1001-1005
Citations number
11
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
377
Issue
1-3
Year of publication
1997
Pages
1001 - 1005
Database
ISI
SICI code
0039-6028(1997)377:1-3<1001:TFOSDC>2.0.ZU;2-S
Abstract
The Si(100)-(2 x 1) surface is studied after interaction with SiH4 und er UHV-CVD conditions between 550 and 690 K with high-resolution scann ing tunneling microscopy. Ln this temperature region, new metastable c ross-shaped structural tetramer units are formed in addition to small Si islands and patches of hydrogen-terminated substrate. These tetrame rs are interpreted as a combination of four SiH2 groups connecting fou r Si substrate atoms.