SPUTTERING OF GE(001) - TRANSITION BETWEEN DYNAMIC SCALING REGIMES

Authors
SMILGIES DM ENG PJ LANDEMARK E NIELSEN M
Citation
Dm. Smilgies et al., SPUTTERING OF GE(001) - TRANSITION BETWEEN DYNAMIC SCALING REGIMES, Surface science, 377(1-3), 1997, pp. 1038-1041
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
377
Issue
1-3
Year of publication
1997
Pages
1038 - 1041
Database
ISI
SICI code
0039-6028(1997)377:1-3<1038:SOG-TB>2.0.ZU;2-V
Abstract
We have studied the dynamic behavior of the Ge(001) surface during spu ttering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and s putter current which are separated by a sharp transition. The boundary between these two regimes follows an Arrhenius behavior with an activ ation energy of about 1 eV for the relevant diffusion process.