Nb/Al-AlOx/Nb Josephson junctions are widely used as single or stacked
devices for high-frequency applications. The quality of these junctio
ns depends on the morphological and structural properties of the Nb ba
se film, which must be optimized. To this purpose, niobium films (200
nm thick) have been deposited by RF magnetron sputtering at argon pres
sures between 0.75 and 3 Pa on different substrates. Measurements of t
he substrate curvature indicate that the stress changes from strongly
compressive to zero as the Ar pressure increases. The film surfaces, a
s reconstructed by scanning tunneling microscopy (STM), show grains wi
th a size varying between 30 and 100 nm. The measured roughness is lar
ger for films deposited at higher Ar pressures because of the presence
of larger voids between grains. At low deposition pressures, films sh
ow a smooth surface with a roughness close to I nm.